RS is seen in a curve that droops at high current. All Schottky diode curves have the same slope, but not necessarily the same value of current for a given voltage. This is determined by the saturation current, IS, and is related to the barrier height of the diode. Through the choice of p-type or n-type silicon, and the selection of metal, one can tailor the characteristics of a Schottky diode. Barrier height will be altered, and at the same time CJ and RS will be changed.
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Six-sigma Quality Level? Single, Dual and Quad Versions? Matched Diodes for Consistent Performance? This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The HSMSx series of diodes is the best all-around choice for most applications, featuring low series resistance, low forward voltage at all current levels and good RF characteristics.
Package marking provides orientation and identification. Operation in excess of any one of these conditions may result in permanent damage to the device. VF for diodes in pairs and quads in 15 mV maximum at 1 mA. CTO for diodes in pairs and quads is 0. Package marking code is in white. Package marking code is laser marked. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode.
The conditions are: 20 mV R. The equivalent diagonal and adjacent capacitances can then be calculated by the formulas given below. In a quad, the diagonal capacitance is the capacitance between points A and B as shown in the figure below. Forward Current vs. Forward Voltage at Temperatures. Reverse Current vs. Reverse Voltage at Temperatures. Total Capacitance vs. Reverse Voltage. A 10 1 0. Dynamic Resistance vs. Forward Current.
VF Right Scale 1 1 0. IF Left Scale 10? VF Right Scale 1 0. Typical Output Voltage vs. Typical Conversion Loss vs. Drive, 2. Each is optimized for certain applications. The first step in choosing the right product is to select the diode type. All of the products in the HSMSx family use the same diode chip — they differ only in package configuration. The same is true of the HSMSx, x, x, x and x families. Each family has a different set of characteristics, which can be compared most easily by consulting the SPICE parameters given on each data sheet.
The other feature of the HSMSx family is its unit-to-unit and lot-to-lot consistency. The silicon chip used in this series has been designed to use the fewest possible processing steps to minimize variations in diode characteristics. For those applications requiring very high breakdown voltage, use the HSMSx family of diodes. Turn to the HSMSx when you need very low flicker noise. The HSMSx is a family of zero bias detector diodes for small signal applications.
For high frequency detector or mixer applications, use the HSMSx family. The HSMSx is a series of specialty diodes for ultra high speed clipping and clamping in digital circuits. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor.
The most common of several different types, the passivated diode, is shown in Figure 10, along with its equivalent circuit. A for very low barrier diodes. RS is the parasitic series resistance of the diode, the sum of the bondwire and leadframe resistance, the resistance of the bulk layer of silicon, etc.
RF energy coupled into RS is lost as heat—it does not contribute to the rectified output of the diode. CJ is parasitic junction capacitance of the diode, controlled by the thickness of the epitaxial layer and the diameter of the Schottky contact. Rj is the junction resistance of the diode, a function of the total current flowing through it. Schottky Diode Chip. All Schottky diode curves have the same slope, but not necessarily the same value of current for a given voltage.
This is determined by the saturation current, IS, and is related to the barrier height of the diode. Through the choice of p-type or n-type silicon, and the selection of metal, one can tailor the characteristics of a Schottky diode. Barrier height will be altered, and at the same time CJ and RS will be changed. In general, very low barrier height diodes with high values of IS, suitable for zero bias applications are realized on p-type silicon.
Such diodes suffer from higher values of RS than do the n-type. Thus, p-type diodes are generally reserved for detector applications where very high values of RV swamp out high RS and n-type diodes such as the HSMSx are used for mixer applications where high L. DC biased detectors and self-biased detectors used in gain or power control circuits.
In general, the former use resistive impedance matching at the input to improve flatness over frequency —this is possible since the input signal levels are high enough to produce adequate output voltages without the need for a high Q reactive input matching network. These circuits are self-biased no external DC bias and are used for gain and power control of amplifiers. Small signal detectors are used as very low cost receivers, and require a reactive input impedance matching network to achieve adequate sensitivity and output voltage.
Those operating with zero bias utilize the HSMSx family of detector diodes. However, superior performance over temperature can be achieved with the use of 3 to 30? A of DC bias. Such circuits will use the HSMSx family of diodes if the operating frequency is 1. Such detectors can be realized either as series or shunt circuits, as shown in Figure Single Diode Detectors.
The series and shunt circuits can be combined into a voltage doubler, as shown in Figure The doubler offers three advantages over the single diode circuit.
Voltage Doubler. Both the detection sensitivity and the DC forward voltage of a biased Schottky detector are temperature sensitive. Where both must be compensated over a wide range of temperatures, the differential detector is often used.
Such a circuit requires that the detector diode and the reference diode exhibit identical characteristics at all DC bias levels and at all temperatures.
This is accomplished through the use of two diodes in one package, for example the HSMS in Figure In the Agilent assembly facility, the two dice in a surface mount package are taken from adjacent sites on the wafer as illustrated in Figure Differential Detector. Figure Fabrication of Agilent Diode Pairs. In high power applications, coupling of RF energy from the detector diode to the reference diode can introduce error in the differential detector. The HSMSK is illustrated in Figure 15 — note that the ground connections must be made as close to the package as possible to minimize stray inductance to ground.
High Power Differential Detector. Voltage Doubler Differential Detector. The concept of the voltage doubler can be applied to the differential detector, permitting twice the output voltage for a given input power as well as improving input impedance and suppressing second harmonics.
However, care must be taken to assure that the two reference diodes closely match the two detector diodes. While the differential detector works well over temperature, another design approach works well for large signal detectors.
See Figure 18 for the schematic and a physical layout of the circuit. In this design, the two 4. RFin 68? Vo 33 pF 4. D2 68? Temperature Compensated Detector. In certain applications, such as a dual-band cellphone handset operating at both and MHz, the second harmonics generated in the power control output detector when the handset is working at MHz can cause problems. Diodes D3 and D4 provide temperature compensation as described above. Mixer applications The HSMSx family, with its wide variety of packaging, can be used to make excellent mixers at frequencies up to 6 GHz.
RF in 68? Schematic of Suppressed Harmonic Detector. HSMSR 4. V— pF RF in 68? IF out Figure
HSMS-2822 Agilent Technologies, Inc., HSMS-2822 Datasheet
Dijas Usually the time for the calibration of your device can be handled within 5 working days. In certain applications, such as a dual-band cellphone handset operating at both and MHz, the second harmonics generated in the power control output detector when the handset is working at MHz can cause problems. The equation for Vf is: Where both must be compensated over a wide range of temperatures, the differential detector is often used. Planar Double Balanced Mixer. However, superior performance over temperature can be achieved with the use of 3 hsjs 30?
Pair in series Schottky diode
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